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Thin Film Deposition

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Engineering Solutions International Limited, 

Unit 8

Kinsealy Business Park

Kinsealy,

Co. Dublin ,

Ireland.

Tel: +353 1 803 8242

Fax: +353 1 816 9033

Email: info@esil.ie

 

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Engineering Solutions International Limited

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ESIL uses advanced computational techniques to simulate and model thin film deposition methods such as Chemical Vapour Deposition, Physical Vapour Deposition and Atomic Layer Deposition.

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We use a number of commercial CFD and surface chemistry software packages, to prediction two-dimensional or three-dimensional topological evolution for thin film deposition processes. The result of this is a shortened product development cycle and an increase in product functionality and reliability.

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ESIL has particular experience in Atomic Layer Deposition (ALD). Also known as Atomic Layer Epitaxy (ALE), ALD refers to the controlled deposition of single atomic layers onto a substrate. For gas-phase reactors, typically achieved by pulsing the precursors, interspersed with inert gases, ESIL can model the transient surface reaction mechanisms, including time accurate surface species concentrations with transient three-dimensional heat and mass transfer. This technology is primarily used by the Semi-conductor industry.

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ESIL has experience in both reactor and feature scale models for detailed analyses of feature evolution on the micron and sub-micron scale.

 

 

 

  Engineering Solutions International Limited 2006